PART |
Description |
Maker |
RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS (RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor 125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB Ericsson Microelectronics
|
IRFF130 IRFF131 IRFF132 IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
|
General Electric Solid State GE Solid State
|
PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆 LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
|
INFINEON[Infineon Technologies AG]
|
MRF1511NT1 MRF1511T1 |
RF Power Field Effect Transistor
|
FREESCALE[Freescale Semiconductor, Inc]
|
MTM15N20 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
MRF6S27015NR1_07 MRF6S27015GNR1 MRF6S27015NR1 MRF6 |
RF Power Field Effect Transistors
|
FREESCALE[Freescale Semiconductor, Inc]
|
MRF19090 MRF19090R3 MRF19090SR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060N MRF6S1906 |
RF Power Field Effect Transistors
|
Freescale Semiconductor... FREESCALE[Freescale Semiconductor, Inc]
|
MRF1550FNT1 MRF1550N MRF1550NT1 MRF1550NT108 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MRF5P21180HR6-08 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, In...
|
MRF5S19060MR1 MRF5S19060MBR1 |
RF Power Field Effect Transistors
|
FREESCALE[Freescale Semiconductor, Inc]
|